High-performance Organic Field-effect Transistors Research Articles

High-Performance Organic Field-Effect Transistors of Liquid Crystalline Organic Semiconductor by Laser Mapping Annealing.

Organic semiconductors (OSCs), especially small molecule semiconductors, have received increasing attention due to their good designability and variability. Phase transitions and interfacial properties have a decisive influence on device performance. Here, 2-Dodecyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-12) devices are treated with low-power laser annealing, which is able to avoid the influence of the dewetting effect on the hole mobility of organic semiconductor materials. Ultraviolet ozone treatment and self-assembled monolayer treatment can improve the performance and stability of the device. Moreover, after low-temperature thermal annealing, the hole mobility of the device can even reach as high as 4.80 cm2 V-1 s-1, and we tested the optical response of the device to the ultraviolet wavelength and found that its maximum optical responsivity was 8.2 AW-1.

Supramolecular Design and Assembly Engineering toward High-Performance Organic Field-Effect Transistors

Supramolecular Design and Assembly Engineering toward High-Performance Organic Field-Effect Transistors

Graphdiyne particles as nano-floating gates for high-performance nonvolatile organic field-effect transistor memory

Graphdiyne particles (GDYP), newcomers of carbon family, were employed as nano-floating gates in organic field-effect transistor (OFET) memories. The charge-trapping layer was prepared by blending GDYP into a polystyrene (PS) matrix. The effect of GDYP doping ratio on memory performances was investigated, and the OFET memory with the optimal doping concentration of the GDYP (0.3 mg/mL) exhibits ambipolar memory behavior with a wide memory window as large as 86 V, excellent retention time over 104 s with a high ON/OFF current ratio of 7.5 × 105. This work demonstrates that graphdiyne is a promising charge-trapping material for high-performance nonvolatile OFET memory devices.

Nature of Ohmic and Schottky contacts on pentacene-based organic field-effect transistor

Organic field-effect transistors (OFETs) have become promising components for a wide range of applications in the fast-growing field of organic electronics. Nevertheless, with the increasing need for high-performance OFETs, it is crucial to understand and challenge the contact resistance in these devices, because it represents a critical bottleneck that can significantly suppress the overall performance. Herein, we report the evaluation of the voltage dependence of the injection barrier in pentacene-based OFET devices with Au or Ag electrodes. The injection barrier of the device with Au electrodes showed an Ohmic nature with a barrier of approximately 170 ~ 200 meV, whereas the barrier in the device with Ag electrodes behaved as a Schottky contact and the zero-field injection barrier reached 552 ± 2 meV.

Synthesis of [1]Benzothieno[3,2-b][1]benzothiophenes through Iodine-Mediated Sulfur Insertion Reaction.

[1]Benzothieno[3,2-b][1]benzothiophenes (BTBTs) are important molecules that have been extensively studied as high-performance organic field-effect transistors (OFETs). Therefore, it is important to develop a simple synthetic method for these molecules. In this paper, a synthetic method to obtain the BTBTs from 2-arylbenzo[b]thiophenes and elemental sulfur, in which two C-S bonds are formed at once, is described. In this method, molecular iodine plays a very important role as an additive. The role of iodine is discussed in the presumed reaction pathways.

High-Performance Organic Field-Effect Transistors Based on Two-Dimensional Vat Orange 3 Crystals

The exploration and research of low-cost, environmentally friendly, and sustainable organic semiconductor materials are of immense significance in various fields, including electronics, optoelectronics, and energy conversion. Unfortunately, these semiconductors have almost poor charge transport properties, which range from ∼ 10−4 cm2⋅V−1⋅s−1 to ∼ 10−2 cm2⋅V−1⋅s−1. Vat orange 3, as one of these organic semiconductors, has great potential due to its highly conjugated structure. We obtain high-quality multilayered Vat orange 3 crystals with two-dimensional (2D) growth on h-BN surfaces with thickness of 10–100 nm using physical vapor transport. Raman’s results confirm the stability of the chemical structure of Vat orange 3 during growth. Furthermore, by leveraging the structural advantages of 2D materials, an organic field-effect transistor with a 2D vdW vertical heterostructure is further realized with h-BN encapsulation and multilayered graphene contact electrodes, resulting in an excellent transistor performance with On/Off ratio of 104 and high field-effect mobility of 0.14 cm2⋅V−1⋅s−1. Our results show the great potential of Vat orange 3 with 2D structures in future nano-electronic applications. Furthermore, we showcase an approach that integrates organic semiconductors with 2D materials, aiming to offer new insights into the study of organic semiconductors.

Anthracene-[1]benzothieno[3,2-b][1]benzothiophene (BTBT) dyad and triads as p-type semiconductors for organic field-effect transistors and phototransistors

[1]Benzothieno[3,2-b][1]benzothiophene (BTBT) and anthracene (An) are the most promising planar building blocks for constructing p-type small molecules for high-performance organic field-effect transistors (OFETs).

Hole Mobility Enhancement in Benzo[1,2-b:4,5-b']Dithiophene-Based Conjugated Polymer Transistors through Directional Alignment, Perovskite Functionalization and Solid-State Electrolyte Gating.

Tunability in electronic and optical properties has been intensively explored for developing conjugated polymers and their applications in organic and perovskite-based electronics. Particularly, the charge carrier mobility of conjugatedpolymer semiconductors has been deemed to be a vital figure-of-merit for achieving high-performance organic field-effect transistors (OFETs). In this study, the systematic hole carrier mobility improvement of benzo[1,2-b:4,5-b']dithiophene-based conjugated polymer in perovskite-functionalized organic transistors is demonstrated. In conventional OFETs with a poly(methyl methacrylate) (PMMA)gate dielectric, improvements in hole mobility of 0.019cm2V-1s-1 are measured using an off-center spin-coating technique, which exceeds those of on-center counterparts (0.22 ± 0.07 × 10-2cm2V-1s-1). Furthermore, the mobility drastically increases by adopting solid-state electrolyte gating, corresponding to 2.99 ± 1.03cm2V-1s-1 for the control, and the best hole mobility is 8.03cm2V-1s-1 (average ≈ 6.94 ± 0.59cm2V-1s-1) for perovskite-functionalized OFETs with a high current on/off ratio of >106. The achieved device performance would be attributed to the enhanced film crystallinity and charge carrier density in the hybrid perovskite-functionalized organic transistor channel, resulting from the high-capacitance electrolyte dielectric.

Polar Polymorphism: A New Intermediate Structure toward the Thin-Film Phase in Asymmetric Benzothieno[3,2-b][1]-benzothiophene Derivatives.

Understanding structure and polymorphism is relevant for any organic device optimization, and it is of particular relevance in 7-decyl-2-phenyl[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10) since high carrier mobility in Ph-BTBT-10 thin films has been linked to the structural transformation from the metastable thin-film phase to the thermodynamically stable bilayer structure via thermal annealing. We combine here a systematic nanoscale morphological analysis with local Kelvin probe force microcopy (KPFM) that demonstrates the formation of a polar polymorph in thin films as an intermediate structure for thicknesses lower than 20 nm. The polar structure develops with thickness a variable amount of structural defects in the form of individual flipped molecules (point defects) or sizable polar domains, and evolves toward the reported nonpolar thin-film phase. The direct experimental evidence is supported by electronic structure density functional theory calculations. The structure of the film has dramatic effects on the electronic properties, leading to a decrease in the film work function (by up to 1 eV) and a considerable broadening of the occupied molecular orbitals, attributed to electrostatic disorder. From an advanced characterization point of view, KPFM stands out as a valuable tool for evaluating electrostatic disorder and the conceivable emergence of polar polymorphs in organic thin films. The emergence of polar assemblies introduces a critical consideration for other asymmetric BTBT derivatives, which may be pivotal to understanding the structure-property relationships in organic field-effect transistors (OFETs). A precise determination of any polar assemblies close to the dielectric interface is critical for the judicious design and upgrading of high-performance OFETs.

High-performance organic field effect transistor of liquid crystalline organic semiconductor using silver electrodes with bottom-gate top-contact configuration

We have investigated organic field effect transistors (OFETs) fabricated with liquid crystalline organic semiconductor, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10), and silver (Ag) source-drain electrodes. Ph-BTBT-10 OFETs using Ag source-drain electrodes in bottom-gate top-contact configuration exhibit high mobility of 8.2 cm2 Vs−1, which is similar to those of gold (Au) electrodes. Contact resistance of Ph-BTBT-10 OFETs using Ag electrodes achieved 0.49 kΩcm by transfer length method, which is lower than those of Au electrodes, 2.7 kΩcm. Ph-BTBT-10 OFET using Ag source-drain electrodes in bottom-gate top-contact configuration is a promising candidate for high-performance and low-cost OFETs.

Oxygen-Induced Barrier Lowering for High-Performance Organic Field-Effect Transistors.

Organic field-effect transistors (OFETs) have the advantages of low-cost, large-area processing and could be utilized in a variety of emerging applications. However, the generally large contact resistance (Rc) limits the integration and miniaturization of OFETs. The Rc is difficult to reduce due to an incompatibility between obtaining strong orbit coupling and the barrier height reduction. In this study, we developed an oxygen-induced barrier lowering strategy by introducing oxygen (O2) into the nanointerface between the electrodes and organic semiconductors layer and achieved an ultralow channel width-normalized Rc (Rc·W) of 89.8 Ω·cm and a high mobility of 11.32 cm2 V-1 s-1. This work demonstrates that O2 adsorbed at the nanointerface of metal-semiconductor contact can significantly reduce the Rc from both experiments and theoretical simulations and provides guidance for the construction of high-performance OFETs, which is conducive to the integration and miniaturization of OFETs.

Interfacial molecular screening of polyimide dielectric towards high-performance organic field-effect transistors

The compatibility of the gate dielectrics with semiconductors is vital for constructing efficient conducting channel for high charge transport. However, it is still a highly challenging mission to clearly clarify the relationship between the dielectric layers and the chemical structure of semiconductors, especially vacuum-deposited small molecules. Here, interfacial molecular screening of polyimide (Kapton) dielectric in organic field-effect transistors (OFETs) is comprehensively studied. It is found that the semiconducting small molecules with alkyl side chains prefer to form a high-quality charge transport layer on polyimide (PI) dielectrics compared with the molecules without alkyl side chains. On this basis, the fabricated transistors could reach the mobility of 1.2 cm2 V−1 s−1 the molecule with alkyl side chains on bare PI dielectric. What is more, the compatible semiconductor and dielectric would further produce a low activation energy (EA) of 3.01 meV towards efficient charge transport even at low temperature (e.g., 100 K, 0.9 cm2 V−1 s−1). Our research provides a guiding scheme for the construction of high-performance thin-film field-effect transistors based on PI dielectric layer at room and low temperatures.

Threshold voltage tuning in gelatin biopolymer-gated high-performance organic field-effect transistors

Natural biopolymers have been of considerable interest in developing flexible, biocompatible and biodegradable organic electronic devices. Herein, we demonstrate gelatin biopolymer gated OFETs utilizing thermally evaporated α-sexithiophene (α-6T) and solution-processable poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT-C14) as organic semiconductors (OS). The tunability of threshold voltage (VT) for the OFETs as a function of lithium-perchlorate (LP) content (% w/w) in gelatin is also explored. With the increase of LP (0% to 20% w/w) in the gelatin, VT reduces from − 5.7 V to − 1.75 V and − 2.15 V to + 0.1 V for α-6T and PBTTT-C14 based OFETs, respectively. The highest hole mobility in the saturation regime (μS) of α-6T and PBTTT-C14 is estimated as 2.0 cm2V−1s−1 and 0.1 cm2V−1s−1 respectively with the on/off ratio ∼103. It is ascribed to the efficient formation of an electric double layer (EDL) at the dielectric/organic interface. The reduction in the VT upon LP incorporation can be attributed to the additional ionic contribution of ClO4- to the EDL along with the trap density (NT) reduction at dielectric/OS interface.

High-performance flexible organic field effect transistors with print-based nanowires

Polymer nanowire (NW) organic field-effect transistors (OFETs) integrated on highly aligned large-area flexible substrates are candidate structures for the development of high-performance flexible electronics. This work presents a universal technique, coaxial focused electrohydrodynamic jet (CFEJ) printing technology, to fabricate highly aligned 90-nm-diameter polymer arrays. This method allows for the preparation of uniformly shaped and precisely positioned nanowires directly on flexible substrates without transfer, thus ensuring their electrical properties. Using indacenodithiophene-co-benzothiadiazole (IDT-BT) and poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8-BT) as example materials, 5 cm2 arrays were prepared with only minute size variations, which is extremely difficult to do using previously reported methods. According to 2D-GIXRD analysis, the molecules inside the nanowires mainly adopted face-on π-stacking crystallite arrangements. This is quite different from the mixed arrangement of thin films. Nanowire-based OFETs exhibited a high average hole mobility of 1.1 cm2 V−1 s−1 and good device uniformity, indicating the applicability of CFEJ printing as a potential batch manufacturing and integration process for high-performance, scalable polymer nanowire-based OFET circuits. This technique can be used to fabricate various polymer arrays, enabling the use of organic polymer semiconductors in large-area, high-performance electronic devices and providing a new path for the fabrication of flexible displays and wearable electronics in the future.

General Spatial Confinement Recrystallization Method for Rapid Preparation of Thickness-Controllable and Uniform Organic Semiconductor Single Crystals.

Organic semiconductor single crystals (OSSCs) are ideal materials for studying the intrinsic properties of organic semiconductors (OSCs) and constructing high-performance organic field-effect transistors (OFETs). However, there is no general method to rapidly prepare thickness-controllable and uniform single crystals for various OSCs. Here, inspired by the recrystallization (a spontaneous morphological instability phenomenon) of polycrystalline films, a spatial confinement recrystallization (SCR) method is developed to rapidly (even at several second timescales) grow thickness-controllable and uniform OSSCs in a well-controlled way by applying longitudinal pressure to tailor the growth direction of grains in OSCs polycrystalline films. The relationship between growth parameters including the growth time, temperature, longitudinal pressure, and thickness is comprehensively investigated. Remarkably, this method is applicable for various OSCs including insoluble and soluble small molecules and polymers, and can realize the high-quality crystal array growth. The corresponding 50 dinaphtho[2,3-b:2″,3″-f]thieno[3,2-b]thiophene (DNTT) single crystals coplanar OFETs prepared by the same batch have the mobility of 4.1 ± 0.4 cm2 V-1 s-1 , showing excellent uniformity. The overall performance of the method is superior to the reported methods in term of growth rate, generality, thickness controllability, and uniformity, indicating its broad application prospects in organic electronic and optoelectronic devices.

Meniscus‐Guided Deposition of Organic Semiconductor Thin Films: Materials, Mechanism, and Application in Organic Field‐Effect Transistors

Solution-processable organic semiconductors are one of the promising materials for the next generation of organic electronic products, which call for high-performance materials and mature processing technologies. Among many solution processing methods, meniscus-guided coating (MGC) techniques have the advantages of large-area, low-cost, adjustable film aggregation, and good compatibility with theroll-to-roll process, showing good research results in the preparation of high-performance organic field-effect transistors. In this review, the types of MGC techniques are first listed and the relevant mechanisms (wetting mechanism, fluid mechanism, and deposition mechanism) are introduced. The MGC processes are focused and the effect of the key coating parameters on the thin film morphology and performance with examples is illustrated. Then, the performance of transistors based on small molecule semiconductors and polymer semiconductor thin films prepared by various MGC techniques is summarized. In the third section, various recent thin film morphology control strategies combined with the MGCs are introduced. Finally, the advanced progress of large-area transistor arrays and the challenges for roll-to-roll processes are presented using MGCs. Nowadays, the application of MGCs is still in the exploration stage, its mechanism is still unclear, and the precise control of film deposition still needs experience accumulation.

Alternating copolymers of thiophene-flanked thiazoloisoindigo and thiophene-flanked benzothiadiazole for high-performance ambipolar organic field-effect transistors

Alternating copolymers of thiophene-flanked thiazoloisoindigo and thiophene-flanked benzothiadiazole for high-performance ambipolar organic field-effect transistors

Ultralow contact resistance in organic transistors via orbital hybridization

Organic field-effect transistors (OFETs) are of interest in unconventional form of electronics. However, high-performance OFETs are currently contact-limited, which represent a major challenge toward operation in the gigahertz regime. Here, we realize ultralow total contact resistance (Rc) down to 14.0 Ω ∙ cm in C10-DNTT OFETs by using transferred platinum (Pt) as contact. We observe evidence of Pt-catalyzed dehydrogenation of side alkyl chains which effectively reduces the metal-semiconductor van der Waals gap and promotes orbital hybridization. We report the ultrahigh performance OFETs, including hole mobility of 18 cm2 V−1 s−1, saturation current of 28.8 μA/μm, subthreshold swing of 60 mV/dec, and intrinsic cutoff frequency of 0.36 GHz. We further develop resist-free transfer and patterning strategies to fabricate large-area OFET arrays, showing 100% yield and excellent variability in the transistor metrics. As alkyl chains widely exist in conjugated molecules and polymers, our strategy can potentially enhance the performance of a broad range of organic optoelectronic devices.

Synergistic Effect of Solvent Vapor Annealing and Chemical Doping for Achieving High-Performance Organic Field-Effect Transistors with Ideal Electrical Characteristics.

Contact resistance and charge trapping are two key obstacles, often intertwined, that negatively impact on the performance of organic field-effect transistors (OFETs) by reducing the overall device mobility and provoking a nonideal behavior. Here, we expose organic semiconductor (OSC) thin films based on blends of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT-C8) with polystyrene (PS) to (i) a CH3CN vapor annealing process, (ii) a doping I2/water procedure, and (iii) vapors of I2/CH3CN to simultaneously dope and anneal the films. After careful analysis of the OFET electrical characteristics and by performing local Kelvin probe force microscopy studies, we found that the vapor annealing process predominantly reduces interfacial shallow traps, while the chemical doping of the OSC film is responsible for the diminishment of deeper traps and promoting a significant reduction of the contact resistance. Remarkably, the devices treated with I2/CH3CN reveal ideal electrical characteristics with a low level of shallow/deep traps and a very high and almost gate-independent mobility. Hence, this work demonstrates the promising synergistic effects of performing simultaneously a solvent vapor annealing and doping procedure, which can lead to trap-free OSC films with negligible contact resistance problems.

Difluorobenzimidazole-decorated helical perylene diimide dimers for high-performance n-type organic field-effect transistors

N-type benzimidazole and difluorobenzimidazole fused perylene diimide dimer semiconductors were synthesized and a remarkable electronic mobility of 0.13 cm2 V−1 s−1 was obtained for a FMBI-PDI2-based organic field-effect transistor (OFET).